gan hemt power transistor 30w cw, 30 mhz - 3.5 ghz magx - 000035 - 030000 production v1 10 feb 12 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additional data sheets and product information. m/a - com technology solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 1 advanced: data sheets contain information regarding a product m/a - com technology solutions is considering for development. performance is based on target specifications, simu- lated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a - com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be avail- able. commitment to produce in volume is not guaranteed. features ? gan depletion mode hemt microwave transistor ? common source configuration ? no internal matching ? broadband class ab operation ? thermally enhanced cu/mo/cu package ? rohs compliant ? +50v typical operation ? mttf of 600 years (channel temperature < 200c) applications general purpose for pulsed or cw applications ? commercial wireless infrastructure - wcdma, lte, wimax ? civilian and military radar ? military and commercial communications ? public radio ? industrial, scientific and medical ? satcom ? instrumentation ? avionics product description the magx - 000035 - 030000 is a gold metalized unmatched gallium nitride (gan) on silicon carbide rf power transistor suitable for a variety of rf power amplifier applications. using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over multiple octave bandwidths for todays demanding application needs. the magx - 000035 - 030000 is constructed using a thermally enhanced cu/mo/cu flanged ceramic package which provides excellent thermal performance. high breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies. ordering information magx - 000035 - 030000 30w gan power transistor magx - 000035 - sb1ppr 1.5 ghz evaluation board freq. (mhz) pout (w ave) gain (db) eff (%) 30 58 40 80 100 44 32 65 500 43 27 66 1500 42 20 59 3000 35 13 55 3500 30 12 53 typical cw rf performance
gan hemt power transistor 30w cw, 30 mhz - 3.5 ghz magx - 000035 - 030000 production v1 10 feb 12 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additional data sheets and product information. m/a - com technology solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 2 advanced: data sheets contain information regarding a product m/a - com technology solutions is considering for development. performance is based on target specifications, simu- lated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a - com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be avail- able. commitment to produce in volume is not guaranteed. absolute maximum ratings (1, 2, 3) limit supply voltage (vdd) +65v supply voltage (vgg) - 8 to 0v supply current (id1) 1200 ma input power (pin) +30 dbm junction/channel temp 200 oc mttf (t j <200c) 600 years continuous power dissipation (pdiss) at 85 oc 30 w pulsed power dissipation (pavg) at 85 oc 65 w thermal resistance, (tchannel = 200 oc), cw 4.2 oc/w thermal resistance, (tchannel = 200 oc), pulsed 500us, 10% duty cycle 2 oc/w operating temp - 40 to +95c storage temp - 65 to +150c esd min. - machine model (mm) 50 v esd min. - human body model (hbm) >250 v (1) operation of this device above any one of these parameters may cause permanent damage. (2) channel temperature directly affects a device's mttf. channel temperature should be kept as low as possible to maximize l ife time. (3) for saturated performance it recommended that the sum of (3*vdd + abs(vgg)) <175 parameter test conditions symbol min typ max units dc characteristics drain - source leakage current v gs = - 8v, v ds = 175v i ds - - 2.5 ma gate threshold voltage v ds = 5v, i d = 6ma v gs (th) - 5 - 3 - 2 v forward transconductance v ds = 5v, i d = 1.5ma g m 1.0 - - s dynamic characteristics input capacitance v ds = 0v, v gs = - 8v, f = 1mhz c iss - 13.2 - pf output capacitance v ds = 50v, v gs = - 8v, f = 1mhz c oss - 5.6 - pf reverse transfer capacitance v ds = 50v, v gs = - 8v, f = 1mhz c rss - 0.5 - pf
gan hemt power transistor 30w cw, 30 mhz - 3.5 ghz magx - 000035 - 030000 production v1 10 feb 12 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additional data sheets and product information. m/a - com technology solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 3 advanced: data sheets contain information regarding a product m/a - com technology solutions is considering for development. performance is based on target specifications, simu- lated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a - com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be avail- able. commitment to produce in volume is not guaranteed. electrical specifications: t c = 25 5c ( room ambient ) test fixture impedance f (mhz) zif - opt ( ) zof - opt ( ) 30 71 + j 255 24.9 - j 6.8 100 7.7 + j 66.6 22.14 - j 4.33 500 3.19 + j 13.8 21.8 + j 9.94 1500 1.4 + j 0.16 9.31 + j 9.34 3000 3.1 - j 9.96 3.32 + j 1.2 parameter test conditions symbol min typ max units rf functional tests vdd=50v, idq= 100 ma, single frequency optimized data cw output power (p2db) 1 .5ghz pin = 0.7w ave p out 30 42 - w ave small signal gain @ 1.5 ghz pout = 5w ave g p 18 20 db drain efficiency @ 1.5 ghz pin = 0.7w ave d 50 60 % load mismatch stability pin = 1w ave vswr - s 5:1 - - - load mismatch tolerance pin = 1w ave vswr - t 10:1 - - - i n p u t n e t w o r k z i f o u t p u t n e t w o r k z o f
gan hemt power transistor 30w cw, 30 mhz - 3.5 ghz magx - 000035 - 030000 production v1 10 feb 12 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additional data sheets and product information. m/a - com technology solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 4 advanced: data sheets contain information regarding a product m/a - com technology solutions is considering for development. performance is based on target specifications, simu- lated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a - com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be avail- able. commitment to produce in volume is not guaranteed. 0 10 20 30 40 50 30 100 500 1500 3000 3500 gain (db) frequency (mhz) small signal gain vs frequency (single point optmized) 0 20 40 60 80 100 30 100 500 1500 3000 3500 efficiency (%) frequency (mhz) efficiency vs frequency, p2db (single point optmized) 0 10 20 30 40 50 60 70 30 100 500 1500 3000 3500 pout (w) frequency (mhz) cw output power (p2db) vs frequency (single point optmized)
gan hemt power transistor 30w cw, 30 mhz - 3.5 ghz magx - 000035 - 030000 production v1 10 feb 12 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additional data sheets and product information. m/a - com technology solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 5 advanced: data sheets contain information regarding a product m/a - com technology solutions is considering for development. performance is based on target specifications, simu- lated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a - com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be avail- able. commitment to produce in volume is not guaranteed. 30 35 40 45 50 55 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 pout (dbm) pin (dbm) pout vs pin (f=1.5 ghz) - 52.00 - 47.00 - 42.00 - 37.00 - 32.00 - 27.00 - 22.00 - 17.00 - 12.00 0.10 1.00 10.00 100.00 imd3 (dbc), f0=1.5ghz, df=5mhz pout - avg (w) imd3(idq=100ma) imd3(idq=150ma) imd3(idq=200ma) imd3(idq=250ma)
gan hemt power transistor 30w cw, 30 mhz - 3.5 ghz magx - 000035 - 030000 production v1 10 feb 12 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additional data sheets and product information. m/a - com technology solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 6 advanced: data sheets contain information regarding a product m/a - com technology solutions is considering for development. performance is based on target specifications, simu- lated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a - com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be avail- able. commitment to produce in volume is not guaranteed. 1.5 ghz test fixture circuit dimensions 1.5 ghz test fixture assembly
gan hemt power transistor 30w cw, 30 mhz - 3.5 ghz magx - 000035 - 030000 production v1 10 feb 12 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additional data sheets and product information. m/a - com technology solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 7 advanced: data sheets contain information regarding a product m/a - com technology solutions is considering for development. performance is based on target specifications, simu- lated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a - com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be avail- able. commitment to produce in volume is not guaranteed. outline drawings outline drawings turning the device on 1. set v gs to the pinch - off (v p ), typically - 5v 2. turn on v ds to nominal voltage (50v) 3. increase v gs until the i ds current is reached 4. apply rf power to desired level turning the device off 1. turn the rf power off 2. decrease v gs down to v p 3. decrease v ds down to 0v 4. turn off v gs correct device sequencing
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